FQPF11P06
Manufacturer:
On Semiconductor
Mfr.Part #:
FQPF11P06
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole P-Channel number of channels:1 30 W -60 V Continuous Drain Current (ID):8.6 A 17 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -60 V |
| Length | 10.36 mm |
| Width | 4.9 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 175 MΩ |
| Height | 16.07 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | -11.4 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 30 W |
| Power Dissipation | 30 W |
| Number of Channels | 1 |
| Input capacitance | 550 pF |
| Continuous Drain Current (ID) | 8.6 A |
| Rds On Max | 175 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| Turn-On Delay Time | 6.5 ns |
| Turn-Off Delay Time | 15 ns |
| Element Configuration | Single |
| Fall Time | 45 ns |
| Rise Time | 40 ns |
| Gate Charge | 17 nC |
| Drain to Source Resistance | 175 mΩ |
| Gate to Source Voltage (Vgs) | 25 V |
| Drain to Source Breakdown Voltage (Vds) | -60 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 4 V |
| FET Type(Transistor Polarity) | P-Channel |
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